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Latch-up free ESD protection design with SCR structure in advanced CMOS technology

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3 Author(s)
Chang-Tzu Wang ; ESD Eng. Dept., United Microelectron. Corp., Hsinchu, Taiwan ; Tien-Hao Tang ; Kuan-Cheng Su

An electrostatic discharge (ESD) protection circuit with silicon-controlled-rectifier (SCR) device has been designed without latch-up risk. After fabrication in a 0.13-μm CMOS process, the ESD protection circuit with SCR width of 60μm can sustain 6.2kV human-body-model (HBM) and 475V machine model (MM) ESD tests. The latch-up test shows the immunity against 500-mA triggering current under 3.3V supply voltage.

Published in:

Reliability Physics Symposium (IRPS), 2011 IEEE International

Date of Conference:

10-14 April 2011

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