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Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies

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10 Author(s)
Jae-Joon Kim ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Linder, B.P. ; Rao, R.M. ; Tae-Hyoung Kim
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Ring oscillator (RO) structures that separate NBTI and PBTI effects are implemented in a high-k metal gate technology. The measurement results clearly show significant RO frequency degradation from PBTI as well as NBTI. For comparison, RO structures with the same principle are also implemented in a SiO2/poly-gate technology, where PBTI is negligible. Experimental results show noticeable frequency degradation under NBTI-only stress mode but negligible degradation under PBTI-only mode, which illustrates the validity of the proposed principle and structures.

Published in:

Reliability Physics Symposium (IRPS), 2011 IEEE International

Date of Conference:

10-14 April 2011