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Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding

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4 Author(s)
Ryu, K.K. ; Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA ; Roberts, J.C. ; Piner, E.L. ; Palacios, T.

This letter presents a method to fabricate thin-body N-face GaN-on-insulator-on-Si (100) wafers. These new wafers are promising to increase the carrier confinement and reduce the contact resistance in AlGaN/GaN high electron mobility transistors (HEMTs). In the reported technology, a Ga-face AlGaN/GaN epilayer grown on Si (111) is transferred to a Si (100) wafer by direct wafer bonding and thinned down by selective dry etch to the device active layers. A GaN channel thickness as thin as 20 nm is obtained with the use of AlGaN etch-stop layers. Excellent transport characteristics are obtained in the fabricated thin-body N-face AlGaN/GaN structures, with a sheet resistance of 430 Ω/sq, an electron mobility of 1700 cm2/V · s, and a 2-D electron gas concentration of 9 × 1012 cm-2. HEMTs fabricated on these N-face thin-body epilayers shows excellent current-voltage characteristics and great potential for high-frequency applications.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )