Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Electrical Degradation and Recovery of Low-Temperature Polycrystalline Silicon Thin-Film Transistors in Polycrystalline Silicon Plasma Process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Jiun-Jye Chang ; Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan ; Kuei-Shu Chang-Liao ; Tien-Ko Wang ; Yung-Chun Wu
more authors

The plasma-process-induced damage (PPID) of low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) during the etching of the poly-Si film was investigated in this paper. The results reveal the relationship between the device degradation and the PPID during TFT liquid-crystal-display fabrication. This degradation is caused in part by the damage at the edge of the poly-Si film in plasma exposure. The trapped-state densities Ntrap are measured to clarify the relationship between instability and plasma etching damages. The plasma-process condition substantially affects the PPID of the poly-Si etching process. The main mechanism is the generation of charge trapping states at the poly-Si grain boundary in the damaged edge of the TFT channel active region. The electrical recovery from the plasma damage is also studied with various postetching treatments. Hydrogen-base plasma treatment and laser anneal process are revealed to improve the device characteristics due to reduction of charge trapping states.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 8 )