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A built-in self-test scheme for the post-bond test of TSVs in 3D ICs

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6 Author(s)
Yu-Jen Huang ; Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan ; Jin-Fu Li ; Ji-Jan Chen ; Ding-Ming Kwai
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Three-dimensional (3D) integration using through silicon via (TSV) has been widely acknowledged as one future integrated-circuit (IC) technology. A 3D IC including multiple dies connected with TSVs offers many benefits over current 2D ICs. However, the testing of 3D ICs is much more difficult than that of 2D ICs. In this paper, we propose a cost-effective built-in self-test circuit (BIST) to test TSVs of a 3D IC. The BIST scheme, arranging the TSVs into arrays similar to memory, has the features of low test/diagnosis time and low silicon area cost. Simulation results show that the area overhead of the BIST circuit implemented with 0.18μm CMOS technology for a 16×32 TSV array in which each TSV cell size is 45μm2 is 2.24%. Also, the BIST needs only 130 clock cycles to test the TSV array with stuck-at faults. In comparison with the IEEE 1500-based test approach, the BIST scheme can achieve 85.2% area cost and 93.6% test time reduction.

Published in:

VLSI Test Symposium (VTS), 2011 IEEE 29th

Date of Conference:

1-5 May 2011

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