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A low-power (2.76 mW) common-gate (CG) low-noise amplifier (LNA) for ultra-wideband (UWB) systems using standard 0.18 μm CMOS technology is demonstrated. Instead of the traditional single parallel inductor (LS1 only), we propose a new matching network consisting of a series LS1-RS1 in series with a parallel LS2-RS2 to enhance the input matching bandwidth. Flat and high S21 was achieved by using the connecting inductor LC and the peaking inductor LD2 to compensate the gain loss at medium-frequency and high-frequency, respectively. In addition, for suitable values of LC and LD2, flat and low NF (i.e. a nearly critically-damped Q-factor for the second-order NF frequency response) can also be achieved. Over the 3-10 GHz band of interest, the LNA achieved S21 of 10.1±1.7 dB, minimum NF of 3.9 dB (at 4 GHz) and an average NF of 4.6 dB. The power dissipation was 2.76 mW, and the corresponding figure-of-merit (FOM) was 4.3. Both are of the best results ever reported for a CMOS UWB LNA.
Date of Conference: 25-28 April 2011