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A wide-locking range SiGe BiCMOS divide-by-3 injection locked oscillators

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5 Author(s)
Sheng-Lyang Jang ; Department of Electronic Engineering National Taiwan University of Science and Technology, 43, Keelung Road, Section 4, Taipei, Taiwan 106, R.O.C. ; Chia-Wei Chang ; Ching-Lun Cheng ; Ching-Wen Hsue
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An active inductor oscillator-based divide-by-3 injection locked frequency divider (ILFD) is proposed, and was implemented in the 0.35 μm SiGe 3P3M BiCMOS technology. Measurement results show that when the supply voltage Vdd is biased at 3.0 V, the free-running oscillation frequency of the ILFD is tunable from 3.84 GHz to 3.13 GHz, and at the incident power of 0 dBm and the Vtune = 2.5 V, the locking range is about 1.67 GHz, from the incident frequency 10.24 GHz to 11.91 GHz. The core power consumption is 4.32 mW at Vdd = 3.0 V.

Published in:

VLSI Design, Automation and Test (VLSI-DAT), 2011 International Symposium on

Date of Conference:

25-28 April 2011