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InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers

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4 Author(s)
Kai-Hsuan Lee ; Sci. Res. Div., Nat. Synchrotron Radiat. Res. Center, Hsinchu, Taiwan ; Ping-Chuan Chang ; Shoou-Jinn Chang ; San-Lein Wu

We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 8 )

Date of Publication:

Aug. 2011

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