By Topic

Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Alessio Griffoni ; RREACT Group, Dipartimento di Ingegneria dell'Informazione, Università di Padova, via Gradenigo 6B, I-35131, Italy ; Marco Silvestri ; Simone Gerardin ; Gaudenzio Meneghesso
more authors

We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on

Date of Conference:

10-12 Sept. 2008