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Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

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9 Author(s)
Griffoni, A. ; Dipt. di Ing. dell''Inf., Univ. di Padova, Padova, Italy ; Silvestri, M. ; Gerardin, S. ; Meneghesso, G.
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We present the first experimental report of dose-enhancement effects due to interconnects in deep-submicron CMOS, using ad-hoc designed MOSFETs with different metal layouts. We demonstrate that the presence of metal-1 tracks in the proximity of the device active areas may significantly modify the response to X-rays. The impact of the secondary electron emission from metal-1 layers is strongly dependent on the relative position to the transistor lateral isolation and LDD spacers.

Published in:

Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on

Date of Conference:

10-12 Sept. 2008