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A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

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5 Author(s)
Cresti, A. ; Inst. de Microelectron., Electromagn. et Photonique, Lab. d''Hyperfreq. et de Caracterisation, Univ. Joseph Fourier, Grenoble, France ; Pala, M.G. ; Poli, S. ; Mouis, Mireille
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We study the effect of surface roughness (SR) at the Si/SiO2 interfaces on transport properties of quasi 1-D and 2-D silicon nanodevices by comparing the electrical performances of nanowire (NW) and double-gate (DG) field-effect transistors. We address a full-quantum analysis based on the 3-D self-consistent solution of the Poisson-Schrödinger equation within the coupled mode-space nonequilibrium Green function (NEGF) formalism. The influence of SR scattering is also compared with phonon (PH) scattering addressed in the self-consistent Born approximation. We analyze transfer characteristics, current spectra, density of states, and low-field mobility of devices with different lateral size, showing that the dimensionality of the quasi 1-D and 2-D structures induces significant differences only for thin silicon thicknesses. Thin NWs are found more sensitive to the SR-induced variability of the threshold voltage with respect to the DG planar transistors.

Published in:

Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 8 )

Date of Publication:

Aug. 2011

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