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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:32 Issue:7 Help

Technology Assessment of Through-Silicon Via by Using C – V and C – t Measurements

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7 Author(s)
Katti, G. ; IMEC, Leuven, Belgium ; Stucchi, M. ; Velenis, D. ; Thangaraju, S.
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C-V characteristics of through-silicon vias (TSVs) manufactured in two different processing lines are compared to demonstrate the reproducibility of the TSV process module in terms of the minimum TSV depletion capacitance in the operating voltage region. TSV C-V and C-t measurements before and after thermocycling are employed for assessing the oxide liner and Ta barrier integrity of the TSV under the influence of temperature. It is observed that TSV C-V and C-t characteristics remain unchanged before and after thermocycling (1000 cycles).

Published in:
Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )

Date of Publication: July 2011

Page(s):
946 - 948
ISSN :
0741-3106
INSPEC Accession Number:
12083450
Digital Object Identifier :
10.1109/LED.2011.2141650
Product Type:
Journals & Magazines
Date of Publication :
31 May 2011
Date of Current Version :
27 June 2011
Issue Date :
July 2011
Sponsored by :
IEEE Electron Devices Society

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