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This paper aims at reviewing the results that we have obtained during the last ten years in the characterization and modeling of transistor mismatch in advanced complementary metal-oxide-semiconductor (CMOS) technologies. First, we review the theoretical background and modeling approaches that are generally employed for analyzing and interpreting the mismatch results. Next, we present the experimental procedures and methodologies that we used for characterizing the transistor matching. Then, we discuss typical matching results that were obtained on modern CMOS technologies and analyze the main variability (mismatch) sources. Finally, we conclude by summarizing our findings and giving some recommendations for future technologies.