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In(Ga)As/GaAs(001) quantum dot molecules probed by nanofocus high resolution x-ray diffraction with 100 nm resolution

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10 Author(s)
Dubslaff, M. ; Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany ; Hanke, M. ; Burghammer, M. ; Schoder, S.
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In(Ga)As quantum dots, which laterally self-assemble into quantum dot molecules, have been studied by scanning x-ray nanodiffraction, finite element calculations and subsequent kinematical diffraction simulations. X-ray beam sizes of 100 nm enable small scattering volumes comparable to the object size at extremely high local flux densities (≈104 photonsnm-2s-1). By that bulk contributions to the scattering are effectively reduced. Area maps of various individual quantum dot molecules have been measured, whereas the diffraction patterns therein reveal spatially resolved information about the inter quantum dot position correlation function.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 21 )

Date of Publication:

May 2011

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