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High-Speed Selector–Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs

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3 Author(s)
Driad, R. ; Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany ; Makon, R.E. ; Ritter, D.

This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n+-InP layer inserted at the base-collector junction. Molecular-beam-epitaxy-grown abrupt pulse-doped InP-InGaAs-InP DHBTs ensure very high current gains of ~ 90, low saturation voltages of less than 1 V, and high cutoff frequencies of ~ 350 GHz. Using this technology, a compact high-speed high-voltage multiplexer-driver integrated circuit (IC) suitable for high-speed signal processing and communication systems has been designed and fabricated. The IC has successfully been measured at 112 Gb/s with very clear eye openings of up to 2 Vpp with a power consumption of 2 W.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 8 )