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High-performance and room-temperature-processed nanofloating gate memory devices based on top-gate transparent thin-film transistors

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7 Author(s)
Kang, Il-Suk ; National Nanofab Center, Korea Advanced Institute of Science and Technology, Daejeon 305-806, Republic of Korea ; Young-Su Kim ; Seo, Hyun-Sang ; Son, Se Wan
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Transparent nanofloating gate memory devices based on top-gate zinc oxide thin-film transistors were developed. The proposed devices contained a facile and dry-synthesized palladium nanocluster array as a charge-trapping layer. The good programmable memory characteristics were exhibited due to the thin tunneling oxide, caused by the top-gate structure. The good endurance, data retention capability, and environmental stability demonstrated by the proposed device made it suitable for nonvolatile memory applications. As the whole processes were carried at room temperature, this letter has a potential use in fabricating high-performance and high-reliability nonvolatile memory devices on flexible substrates.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 21 )

Date of Publication:

May 2011

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