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Design and modeling method of package for power GaN HEMTs to limit the input matching sensitivity

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9 Author(s)
J. Chéron ; XLIM - UMR 6172, Université de Limoges/CNRS, France ; M. Campovecchio ; D. Barataud ; T. Reveyrand
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This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and by having a very good information about input return loss contours. Moreover, this specific packaged transistor presents input impedance close to 50Ω over [3.0-3.8]GHz.

Published in:

Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on

Date of Conference:

18-19 April 2011