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CAD techniques for development of millimeter wave diodes sources

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3 Author(s)
Camarero, R. ; Dept. de Telecomunicacions i Eng. de Sistemes, Univ. Autonoma de Barcelona, Cerdanyola del Valles, Spain ; de Paco, P. ; Menendez, O.

The development of frequency multipliers based on GaAs Schottky barrier diodes have become a practical solution to implement power sources at millimeter and sub-millimeter wave regions. At these frequencies, parasitic effects introduced by the diode package elements cannot be neglected, and an accurate modeling of it is necessary. A single-anode design approach based on a commercial diode from VDI is presented.

Published in:

Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2011 Workshop on

Date of Conference:

18-19 April 2011

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