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\hbox {Zr}_{x}\hbox {Ti}_{1 - x}\hbox {O}_{2} -Based Ultraviolet Detectors Series

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6 Author(s)
Haifeng Zhang ; State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, China ; Caihui Feng ; Caixia Liu ; Tianjiao Xie
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In this letter, ZrxTi1-xO2-based ultraviolet (UV) detector series with Pt electrodes were fabricated. The ZrxTi1-xO2thin films were prepared by a sol-gel method and characterized by means of X-ray diffraction and UV-visible absorption spectra. At 5 V bias, the dark currents of the detectors were less than 7 nA; under radiation of UV light, a high responsivity rate of 470 A/W was achieved at 270 nm for the Zr0.1Ti0.9O2 detector. The results showed that, at low Zr doping, the photoresponse was greatly improved, whereas at high Zr doping, the response peaks shift to the short-wavelength direction, which provides a new platform to fabricate solar-blind UV detectors.

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IEEE Electron Device Letters  (Volume:32 ,  Issue: 7 )