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Magneto-Electric Coupling in a Multiferroic Tunnel Junction Functioning as a Magnetic-Field-Effect Transistor

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3 Author(s)
Yan Zhou ; Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Hong Kong, China ; Chung-Ho Woo ; Zheng, Y.

A nanoscaled multilayered composite structure made of a ferroelectric tunnel capacitor attached to a magnetic sensor layer is studied using a Landau-Ginzburg thermodynamic model. The relation between the polarization and the mechanical load induced by the magnetic signal via electrostriction is established. Our results suggest that the spin-flip-induced resistance change of such a structure may reach hundreds of percents to orders of magnitude, which is sufficiently strong to allow its use as a magnetic-field-effect transistor.

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Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 1 )