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Matching Model for Planar Bulk Transistors With Halo Implantation

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2 Author(s)
Schaper, U. ; Infineon Technol. AG, Munich, Germany ; Einfeld, J.

Threshold voltage matching of long-channel planar bulk transistors deteriorates strongly by halo implantations compared to the matching of nonhalo devices which follow a gate area dependence (Pelgrom's model). A new compact matching model explains the observations and extends Pelgrom's model to halo transistors using the Vt(L) behavior of the device. The new model is generally valid for halo and nonhalo transistors. It has been tested for several transistor types and technology nodes, showing a significantly increased accuracy. A measure for the halo impact on matching is given.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )