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Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures

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8 Author(s)
Gan, H. ; Center for Spintronics Integrated Syst., Tohoku Univ., Sendai, Japan ; Ikeda, S. ; Yamanouchi, M. ; Miura, K.
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We investigated tunnel magnetoresistance (TMR) properties in double MgO-barrier magnetic tunnel junctions (DMTJs) with (Co25Fe75)100-xBx free-layers with x = 15, 20, and 25 (in at.%) sputtered at different power. The TMR ratio of DMTJs increased with sputtering power, which is ascribed to the B composition reduction in the CoFeB free-layer with increasing sputtering power. The x-ray diffraction measurement showed that crystallization into (001)-oriented texture of CoFeB film sandwiched between the two MgO-layers as well as an improvement of (001) orientation of top MgO-barrier are realized. The TMR ratio over 200% was obtained in DMTJs with a (Co25Fe75)85B15 free-layer sputtered at 0.88 and 1.77 W/cm2.

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Magnetics, IEEE Transactions on  (Volume:47 ,  Issue: 6 )