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Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

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10 Author(s)
Arakawa, Tomonori ; Institute for Chemical Research, Kyoto-University, Uji, Kyoto 611-0011, Japan ; Sekiguchi, Koji ; Nakamura, Shuji ; Chida, Kensaku
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We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the antiparallel configuration is close to unity, it is observed to be typically 0.91±0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 20 )