By Topic

Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
10 Author(s)
Arakawa, Tomonori ; Institute for Chemical Research, Kyoto-University, Uji, Kyoto 611-0011, Japan ; Sekiguchi, Koji ; Nakamura, Shuji ; Chida, Kensaku
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the antiparallel configuration is close to unity, it is observed to be typically 0.91±0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 20 )