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Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs

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7 Author(s)
Rajkumar Santhakumar ; University of California Santa Barbara (UCSB), Santa Barbara, CA, USA ; Brian Thibeault ; Masataka Higashiwaki ; Stacia Keller
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A two-stage distributed amplifier monolithic microwave integrated circuit (MMIC) has been designed and fabricated using dual-gate GaN HEMTs. The measured small-signal gain of the MMIC is about 20 dB over the frequency range of 2-18 GHz. Measured peak saturated output power is about 2 W. A low interstage impedance of 25 Ω is chosen for two reasons. It leads to larger size of the HEMTs in the output stage, and hence, increases output power without reducing the bandwidth. It also keeps the inter-stage transmission lines short, and hence, results in a very compact two-stage design with high gain. To enhance the output power further, capacitive division technique is used in the second stage. Dual-gate HEMTs are used, as they are compact and provide superior performance when compared to standard HEMTs.

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IEEE Transactions on Microwave Theory and Techniques  (Volume:59 ,  Issue: 8 )