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Yttrium-doped Al2O3 (YxAIyO) with different yttrium contents prepared by co-sputtering method is investigated as the inter-poly dielectric (IPD) for flash memory applications. A poor SiO2-like interlayer formed at the IPD/Si interface is confirmed by X-ray photoelectron spectroscopy, and can be sup pressed by Y doping through the transformation of silica into silicate. Compared with Al2O3 and Y2O3 films, the optimized YxAIyO film shows lower interface-state density, lower bulk charge-trapping density, higher dielectric constant, and smaller gate leakage, due to the suppressed interlayer and good thermal property ascribed to appropriate Y and Al contents in the film. Therefore, the optimized YxAIyO film is a promising candidate as the IPD for flash memory.
Device and Materials Reliability, IEEE Transactions on (Volume:11 , Issue: 3 )
Date of Publication: Sept. 2011