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Far-infrared and terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructures

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2 Author(s)
Zhang, W.-D. ; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA ; Woolard, D.L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3590273 

A far-infrared lasing device based upon conduction-band to heavy-hole level interband transitions within a double-barrier broken-gap structure is presented. The upper conduction-band level is populated by resonant tunneling electron injection, and the lower heavy-hole state is depopulated by ultrafast valence-band electron interband tunneling. Significant optical gain exceeding 103 cm-1 for operation in the frequency range 1.9–3.4 THz is predicted from a Kane multiband model based study of an unoptimized structure.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 20 )

Date of Publication:

May 2011

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