By Topic

Profiling \hbox {p}^{+}/\hbox {n} -Well Junction by Nanoprobing and Secondary Electron Potential Contrast

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Liu, Po-Tsun ; Dept. of Photonics & Display Inst., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Jeng-Han Lee

This letter investigates the use of secondary electron potential contrast (SEPC) with an in situ dynamic nanoprobing trigger to examine a silicon p+/n-well junction. Experimental results demonstrate that applying a bias to the p+/n -well junction nodes can intensify the SEPC signal. An image processing procedure is used to convert the image contrast to a voltage scale, allowing the depletion region to be identified. The proposed method can maintain stable voltage conditions in the junction, facilitating inspection of the dopant area by scanning electron microscopy, potentially contributing to the development of an efficient method for examining dopant areas in real circuits.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )