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The authors report the growth of Si nanowires on glass substrate by low-temperature vapor-liquid-solid process and the fabrication of Si nanowire-based humidity sensors. It was found that average length of Si nanowires decreased from 1.6 to 1 μm while the diameter of Si nanowires increased from 90 to 490 nm as we increased the initial Au catalytic layer thickness from 5 nm to 15 nm. It was also found that current measured from these Si nanowires decreased monotonically with RH. Furthermore, it was found that samples with a thinner Au layer thickness could provide a larger sensor response.