By Topic

Complementary Nano-Electro-Mechanical Switch for ultra-low-power applications: Design and modeling

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Alzoubi, K. ; Electr. Eng., Tafila Tech. Univ., Tafila, Jordan ; Saab, D.G. ; Sijing Han ; Tabib-Azar, M.

To address the CMOS power consumption in portable embedded system application, we present a low power four terminal metallic Nano-Electro-Mechanical Switch (NEMS). The NEMS offers unique characteristics in terms of turn on voltage (≈ 1V), switching time (≈ 1ns), virtually zero leakage current, infinite ON current, and a small footprint size. In this paper, we present the NEMS design, its physical device model and a corresponding circuit simulation model. Similar to NMOS and PMOS, the NEMS is configured into N-channel (NNEMS) and P-channel (PNEMS) enabling the realization of logic gates and flip-flops in Complementary (CNEMS) logic similar to CMOS. Consequently, CNEMS logic and sequential circuits are realized by utilizing CMOS design concepts and methodologies. Furthermore, this switch has simple structure that enables its fabrication using CMOS like process. To demonstrate the power efficiency of switch when used in portable embedded systems, we have designed a set of benchmark circuits in both CMOS and CNEMS and compared them in term of power consumptions. For CMOS we use HSPICE simulator to compute the power. To evaluate the power of CNEMS circuits, we derived a CNEMS circuit simulation model and a corresponding CNEMS circuit simulator. To insure the CNEMS circuit simulator accuracy, the CNEMS circuit simulation model is calibrated with the CNEMS physical device model. Our experiment showed that the energy of CNEMS technology is much lower than Nanometer-CMOS technology.

Published in:

Quality Electronic Design (ISQED), 2011 12th International Symposium on

Date of Conference:

14-16 March 2011