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Magnetic properties of ion implanted Ge1-xMnx thin films solidified through pulsed laser melting

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9 Author(s)
Dolph, Melissa Commisso ; Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA ; Kim, Taeseok ; Yin, Wenjing ; Recht, Daniel
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Ge1-xMnx thin films with an average Mn concentration of 0.64 at. % were fabricated through Mn ion implantation into crystalline germanium-on-insulator wafers. Implantation damage was removed and crystallinity restored by pulsed laser melting from a single 30-ns 308-nm XeCl+ excimer laser pulse. Resolidified films demonstrated higher Curie temperatures but smaller saturation magnetizations than those of both as-implanted films and implanted films subjected to rapid thermal annealing. These findings are attributed to the redistribution of Mn during solidification.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 9 )

Date of Publication:

May 2011

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