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Device characterization of correlated electron random access memories

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4 Author(s)
McWilliams, Christopher R. ; Symetrix Corporation, 5055 Mark Dabling Boulevard, Colorado Springs, Colorado 80918, USA ; Celinska, Jolanta ; Paz de Araujo, Carlos A. ; Xue, Kan-Hao

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3581206 

The switching properties and characterization of correlated electron random Access Memories (CeRAMs) are described herein. High temperature retention, cycle dispersion and optimization, cycle Fatigue, and switching parameter optimization have been investigated. CeRAM’s display initially conductive or “born-ON” behavior without the need for the high electroforming voltages usually required for other transition metal oxide based resistive memories. Nonvolatile data retention at elevated temperatures up to 573 K (300 °C) in addition to a wide operating range from 4 to 423 K for CeRAM has been confirmed. CeRAMs also show exceptional read endurance with no evidence of fatigue out to 1012 cycles. Desirable scaling characteristics for high density memory application have also been shown for CeRAMs due to a widening of the read window and consistent write window as devices are scaled down.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 9 )

Date of Publication:

May 2011

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