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A non-filamentary model for unipolar switching transition metal oxide resistance random access memories

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4 Author(s)
Xue, Kan-Hao ; Department of Electrical and Computer Engineering, University of Colorado, Colorado Springs, Colorado 80918, USA ; Paz de Araujo, Carlos A. ; Celinska, Jolanta ; McWilliams, Christopher

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A model for resistance random access memory (RRAM) is proposed. The RRAM under research utilizes certain transition metal oxide (TMO) such as NiO which shows unipolar switching behavior. The existence of metal/insulator states is not explained by filaments but attributed to different Hubbard U values, which stems from an electron correlation effect. Current-voltage formulae are given both on the metal and insulator sides by putting the appropriate solutions of Hubbard model into the mesoscopic Meir-Wingreen transport equation. The RESET phenomenon is explained by a sufficient separation of Fermi levels in the electrodes and hence a Mott transition can be triggered in the anodic region due to a lack of electrons. The SET behavior originates from a tunneling current which removes the insulating region near the anode. Several experimental evidences are also presented to support this model. The model also serves as the theoretical prototype of Correlated Electron Random Access Memory (CeRAM) which is defined to be a TMO RRAM whose working mechanism is based on the strong electron correlation effects.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 9 )

Date of Publication:

May 2011

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