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Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

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8 Author(s)
Mu-Tao Chu ; Grad. Inst. of Precision Engi neering, Nat. Chung Hsing Univ., Taichung, Taiwan ; Wen-Yih Liao ; Ray-Hua Horng ; Tsung-Yen Tsai
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In this letter, InGaN-based solar cells with a p-InGaN/i-InGaN/n-GaN double-heterojunction structure were fabricated and characterized. Two kinds of sapphire substrates [i.e., a conventional sapphire substrate (CSS) and a patterned sapphire substrate (PSS)] were used for epitaxial growth. Both the solar cells grown on the CSS and the PSS demonstrated a high open-circuit voltage of 2.05 and 2.08 V, respectively. However, the short-circuit current of the solar cells grown on the PSS showed an improvement of 27.6% compared with that of the cells grown on the CSS. Such observation could be attributed to low edge-dislocation density and the increase in the light-absorption path by the scattering of interface incident light between the substrate and the epitaxial layer for the solar cell grown on the PSS.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )

Date of Publication:

July 2011

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