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The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low drain current range. The noise spectra show generation-recombination (g-r) noise at drain currents Id <; 5 nA, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher drain currents, a pure 1/f noise is observed. It is shown that the carrier number fluctuations are responsible for the 1/f noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.