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Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

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7 Author(s)
Theodorou, C.G. ; Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece ; Tsormpatzoglou, A. ; Dimitriadis, C.A. ; Khan, S.A.
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The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low drain current range. The noise spectra show generation-recombination (g-r) noise at drain currents Id <; 5 nA, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher drain currents, a pure 1/f noise is observed. It is shown that the carrier number fluctuations are responsible for the 1/f noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )