Cart (Loading....) | Create Account
Close category search window
 

Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Theodorou, C.G. ; Dept. of Phys., Aristotle Univ. of Thessaloniki, Thessaloniki, Greece ; Tsormpatzoglou, A. ; Dimitriadis, C.A. ; Khan, S.A.
more authors

The low-frequency noise of bottom-gate amorphous IGZO thin-film transistors is investigated in the low drain current range. The noise spectra show generation-recombination (g-r) noise at drain currents Id <; 5 nA, attributed to bulk traps located in a thin layer of the IGZO close to the conducting channel. At higher drain currents, a pure 1/f noise is observed. It is shown that the carrier number fluctuations are responsible for the 1/f noise due to trapping/detrapping of carriers in slow oxide traps, located near the interface with uniform spatial distribution.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )

Date of Publication:

July 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.