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Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN

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8 Author(s)
Soh, C.B. ; Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 ; Liu, W. ; Hartono, H. ; Ang, Norman S.S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3589969 

Phosphor-free amber light emitting quantum dots with bimodal size distribution have been effectively incorporated in InGaN/GaN light emitting diodes (LEDs). With overgrowth of the LEDs structure on electrochemically etched nanoporous GaN templates, a reduction in density of threading dislocations and lower biaxial stress are achieved. A higher density of smaller quantum dots ∼4.5×109 cm-2 is incorporated in the multiple quantum well of LEDs on the nanoporous GaN template, generating higher energy emission, and enhanced light output by 1.45 times over LEDs grown on conventional GaN. The carrier capture kinetic by the bimodal distributed quantum dots is discussed with its energy band profile.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 19 )

Date of Publication:

May 2011

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