Cart (Loading....) | Create Account
Close category search window
 

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Medjdoub, F. ; CNRS, IEMN, Villeneuve d''Ascq, France ; Zegaoui, M. ; Ducatteau, D. ; Rolland, N.
more authors

In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition-grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the best of our knowledge, the highest value ever achieved for GaN-on-Si HEMTs. This results from the high 2DEG density of the optimized AlN/GaN heterostructure. Despite the ultrathin barrier of 6 nm, low gate and drain leakage currents of about 10 μA/mm are obtained without the use of a gate dielectric that generally induces reliability issues. Furthermore, the high aspect ratio (gate length Lg/gate-to-channel distance) and low RF losses (at the buffer/Si substrate interface) are reflected in excellent RF performances. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 52 and 102 GHz with a 0.2- μm gate length, respectively, resulting in an fT·Lg product as high as the reported state-of-the-art GaN-on-Si HEMTs.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )

Date of Publication:

July 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.