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Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design

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6 Author(s)
Sattu, A.K. ; Sensor Electron. Technol., Columbia, SC, USA ; Yang, J. ; Gaska, R. ; Khan, M.B.
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We report on the small-signal and power performance of AlGaN/GaN RF switches with novel gate design incorporating regular metal gate deposited over a “slow” gate electrode formed by a low-conducting InGaN film. SPDT RF switch MMICs using hybrid “fast/slow” gate AlGaN/GaN MOSHFETs show superior transmission characteristics while maintaining the same high-power and high-linearity performance as the switches based on conventional MOSHFETs.

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Microwave and Wireless Components Letters, IEEE  (Volume:21 ,  Issue: 6 )