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X-band high power SiGe BiCMOS multi-function chip for active phased array radars

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2 Author(s)
Jeong, J.C. ; RF & Satellite Payload Res. Team, Electron. & Telecommun. Res., Daejeon, South Korea ; Yom, I.B.

An X-band high power multi-function chip has been designed and fabricated using 0.25 m SiGe BiCMOS technology, for a transmit/receive (T/R) module of phased array radar systems. The high power and wideband performance was achieved by the integrated power amplifiers employing an active bias circuit and a series feedback technique. The fabricated multi-function chip with a compact size of 8.4 mm2 (3.5×2.4 mm) exhibits a transmit/receive gain of 30/20×dB and a P1dB of 18 dBm from 8 to 11 GHz.

Published in:

Electronics Letters  (Volume:47 ,  Issue: 10 )