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40 Gbit/s transimpedance amplifier with high linearity range in 0.13 μm SiGe BiCMOS

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3 Author(s)
Knochenhauer, C. ; Dept. of Circuit Design & Network Theor., Tech. Univ. Dresden, Dresden, Germany ; Sedighi, B. ; Ellinger, F.

A 40 Gbit/s transimpedance amplifier (TIA) implemented in 0.13 μm SiGe BiCMOS with high linearity range is presented. The TIA features 24.2 dB (65.2 dB ) gain, a bandwidth of 34.2 GHz and a power consumption of only 80 mW from a 2.5 V supply. Total harmonic distortion is less than 5 up to an input current of 1.3 mApp.

Published in:

Electronics Letters  (Volume:47 ,  Issue: 10 )