By Topic

Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ambrosini, S. ; Istituto Officina dei Materiali CNR, Laboratorio TASC, S.S. 14, Km. 163.5, I-34149 Trieste, Italy ; Fanetti, M. ; Grillo, V. ; Franciosi, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3579449 

Self-catalyzed GaAs nanowire growth was obtained by molecular beam epitaxy on GaAs(001) substrates after predeposition of subnanometer-thick Si layers. Two substrate preparation methods are presented, the first based on the epitaxial growth of Si on GaAs and subsequent exposure to atmosphere, and the second on the direct deposition of Si on epiready GaAs substrates. X-ray photoemission spectroscopy shows that both methods result in a thin Si oxide layer that promotes the growth of GaAs nanowires aligned along the 〈111〉 direction. High densities of nanowires were obtained at substrate temperatures between 620 and 680 °C. Systematic electron microscopy studies indicate that nanowire growth is associated with the formation of Ga nanoparticles on the substrate surface, which act as a catalyst in the vapor-liquid-solid growth mechanism frame. The majority of the nanowires have a pure zinc-blende structure, and their photoluminescence is dominated by a photoluminescence peak 3 to 5 meV in width and centered at 1.516 to 1517 eV.

Published in:

Journal of Applied Physics  (Volume:109 ,  Issue: 9 )