Cart (Loading....) | Create Account
Close category search window
 

Research on the failure property of VDMOS device by thermal cycles

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yin Jinghua ; Sch. of Appl. Sci., Harbin Univ. of Sci. & Technol., Harbin, China ; Hua Qing ; He Yanqiang ; Cao Yijiang
more authors

VDMOS devices with high voltage and high current are widely used in power semiconductor devices, the microelectronics and power electronics technology. In this paper, the failure properties of VDMOS devices have been investigated by temperature cycling experiment and finite element software simulation. The experiment results show that some electric properties of devices degenerate and there are some cracks on the chip surface after high and low temperature cycling. The main failure mechanism is caused by heat and thermal stress, which have a great impact on the reliability of the devices. In order to study the failure property of VDMOS device under the thermal cycles, a three-dimensional model is established and simulated by ANSYS. The simulation results show that, after applied temperature cycling field, as to thermal expansion mismatching among the components of devices, it will give rise to accumulation plastic strain and stress inner device. The dangerous section of the device is on the interface of chip and adhesive layer. The thickness of substrate and adhesive layer affect heat dissipation of device. The simulation results are in good agreement with experimental ones.

Published in:

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on

Date of Conference:

18-20 April 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.