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Electro-thermal analysis of the Insulated Gate Bipolar Transistor module subjected to power cycling test using specified boundary condition technology

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4 Author(s)
Shih-Ying Chiang ; Dept. of Power Mech. Eng., Adv. Packaging Res. Center, China ; Tuan-Yu Hung ; Hsien-Chih Ou ; Kuo-Ning Chiang

The Insulated Gate Bipolar Transistor (IGBT) module subjected to a power cycle test will induce a heat concentration zone, rapid change of temperature profile and non-uniform temperature distribution on the IGBT chip. The variation of junction temperature can affect the lifetime of the IGBT module. However, the test module contains several components with different scales and material characteristics. As such, it is difficult to analyze the thermal dissipation and temperature distribution of the IGBT chip under power cycle test conditions using conventional finite element modeling technique. A local/global methodology is proposed in this study, in conduction analysis, it only require to construct a local finite element model in conjunction with a set of specified boundary conditions (SBC) where the temperatures are obtained from the computational fluid dynamics (CFD) results, this hybrid modeling technology can make the analysis process easier and more convenient.

Published in:

Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2011 12th International Conference on

Date of Conference:

18-20 April 2011