The barrier height of Schottky diodes made on InxGa1-xN nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are ∼1 μm, 20 nm, and 1×1011 cm-2. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height ΦB varies from 1.4 eV (GaN) to 0.44 eV (In0.5Ga0.5N) and agrees well with the ideal barrier heights in the Schottky limit.