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Symmetric Vertical-Channel Nickel-Salicided Poly-Si Thin-Film Transistors With Self-Aligned Oxide Overetching Structures

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8 Author(s)
Wu, Yi‐hong ; Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Po-Yi Kuo ; Yi-Hsien Lu ; Yi-Hsuan Chen
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This paper reports the impacts of NH3 plasma treatment time, oxide overetching depth, and gate oxide thickness on symmetric vertical-channel Ni-salicided poly-Si thin-film transistors (VSA-TFTs) for the first time. off-state currents may be improved by increasing the oxide overetching depth. The on/ off current ratio may be also improved by increasing the oxide overetching depth. The NH3 plasma optimum treatment time of VSA-TFTs is significantly shorter than that of conventional top-gate horizontal-channel TFTs. The performance of VSA-TFTs is degraded by NH3 plasma treatment for too long a time. VSA-TFTs with 15-nm gate oxide thickness display better subthreshold swing (<; 150 mV/dec) than VSA-TFTs with 30-nm gate oxide thickness. off-state currents can be improved by increasing Lmask, even when the oxide overetching depth and the gate oxide thickness are changed.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 7 )