High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode

Highly activated n-type dopant is essential for n
⁺
/p germanium diodes which will be in use for source/drain regions in Ge n-MOSFET as the geometry scaling proceeds. This letter has investigated a combination of ion implantation of Sb in Ge and subsequent laser annealing, which resulted in highly activated Sb beyond 10
²⁰
cm
^-3
. Well-behaved Sb-doped nv/p Ge diode I-V characteristics have been demonstrated combined with TEM, SIMS, and spreading resistance profiling characterization.