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High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for \hbox {n}^{+}/\hbox {p} Junction Diode

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7 Author(s)
Thareja, G. ; Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA ; Chopra, S. ; Adams, B. ; Kim, Y.
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Highly activated n-type dopant is essential for n+/p germanium diodes which will be in use for source/drain regions in Ge n-MOSFET as the geometry scaling proceeds. This letter has investigated a combination of ion implantation of Sb in Ge and subsequent laser annealing, which resulted in highly activated Sb beyond 1020 cm-3. Well-behaved Sb-doped nv/p Ge diode I-V characteristics have been demonstrated combined with TEM, SIMS, and spreading resistance profiling characterization.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 7 )