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Carrier recombination processes in Mg-doped N-polar InN films

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6 Author(s)
Imai, Daichi ; Graduate School of Electrical and Electronic Engineering, Venture Business Laboratory, Chiba University, 1-33 Yayoicho, Inage-ku, Chiba 263-8522, Japan ; Ishitani, Yoshihiro ; Fujiwara, Masayuki ; Kusakabe, Kazuhide
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We investigate the nonradiative carrier recombination (NR) process in Mg-doped p-InN films having lower photoluminescence (PL) intensity than n-InN films. The NR activation energy in the p-type films is found to be in a range of 9–15 meV, which is smaller than that in n-InN films (40–65 meV). We also investigate the effect of the greater mean free path of minority carriers in p-InN. At room temperature the collision rate of minority carriers with NR centers within the radiative lifetime in p-InN is found to be three orders of magnitude greater than that in n-InN.

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Applied Physics Letters  (Volume:98 ,  Issue: 18 )