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Anisotropic structural and optical properties of a-plane (1120) AlInN nearly-lattice-matched to GaN

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8 Author(s)
Laskar, M.R. ; Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India ; Ganguli, Tapas ; Rahman, A.A. ; Arora, Ashish
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We report epitaxial growth of a-plane (1120) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al1-xInxN cannot be simultaneously lattice-matched to GaN in both in-plane directions. We study the influence of temperature on indium incorporation and obtain nearly-lattice-matched Al0.81In0.19N at a growth temperature of 760 °C. We outline a procedure to check in-plane lattice mismatch using high-resolution x-ray diffraction, and evaluate the strain and critical thickness. Polarization-resolved optical transmission measurements of the Al0.81In0.19N epilayer reveal a difference in band gap of ∼140 meV between (electric field) E||c [0001]-axis and Ec conditions with room-temperature photoluminescence peaked at 3.38eV strongly polarized with E||c, in good agreement with strain-dependent band-structure calculations.

Published in:

Applied Physics Letters  (Volume:98 ,  Issue: 18 )

Date of Publication:

May 2011

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