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Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

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5 Author(s)
Marshall, A.R.J. ; Phys. Dept., Lancaster Univ., Lancaster, UK ; Vines, P. ; Ker, P.J. ; David, J.P.R.
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The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:47 ,  Issue: 6 )

Date of Publication:

June 2011

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