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High-Temperature SiC Power Module Electrical Evaluation Procedure

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3 Author(s)
Puqi Ning ; Nat. Transp. Res. Center, Oak Ridge Nat. Lab., Knoxville, TN, USA ; Wang, F. ; Ngo, K.D.T.

To take full advantage of silicon carbide semiconductor devices, high-temperature device packaging needs to be developed. This paper describes potential defects from design and fabrication procedures, and presents a systematic electrical evaluation process to detect such defects. This systematic testing procedure can rapidly detect many defects and reduce the risk in high-temperature packaging testing. A multichip module development procedure that uses this testing procedure is also presented and demonstrated with an example.

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Power Electronics, IEEE Transactions on  (Volume:26 ,  Issue: 11 )