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A Multilevel CMOS–MEMS Design Methodology Based on Response Surface Models

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7 Author(s)
Sato, N. ; NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan ; Sato, Y. ; Kado, Y. ; Ciappa, M.
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We have developed a novel methodology to design systems composed of complementary metal-oxide-semiconductor (CMOS) and microelectromechanical systems (MEMS) parts. This multiscale methodology combines bottom-up modeling and top-down design-space exploration through the following steps: 1) In bottom-up modeling, characteristics of CMOS circuits and MEMS structures are accurately simulated at the circuit and MEMS device level; 2) on the basis of the results of a statistical regression method, these characteristics are abstracted into individual response surface models (RSMs), each with a set of coefficients of design parameters; 3) the models are mathematically connected to describe an elemental unit comprising CMOS and MEMS components; 4) the characteristics of the whole system of elemental units are abstracted into another RSM to cover the system performance; and 5) in top-down design-space exploration, the system requirements are connected to a set of design parameters for the CMOS circuits and MEMS structures by utilizing the RSMs in the reverse direction. To verify the concept, our design methodology was applied to a CMOS-MEMS fingerprint sensor.

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Microelectromechanical Systems, Journal of  (Volume:20 ,  Issue: 3 )